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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BD501/B DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= 50V(Min) 80V(Min) *High Power Dissipation APPLICATIONS *Designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER BD501 VCBO Collector-Base Voltage BD501B BD501 VCEO Collector-Emitter Voltage BD501B VEBO IC PC TJ Tstg Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @ TC=25 Junction Temperature Storage Temperature Range 80 5 10 75 150 -55~150 V A W 85 50 V VALUE 55 V UNIT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.39 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BD501/B TYP. MAX UNIT BD501 VCEO(SUS) Collector-Emitter Sustaining Voltage BD501B IC= 30mA ;IB= 0 B 50 V 80 BD501 VCE(sat) Collector-Emitter Saturation Voltage BD501B IC= 5A; IB= 0.5A B 1.0 IC= 3.5A; IB= 0.35A IC= 5A; VCE= 4V 1.6 BD501B IC= 3.5A; VCE= 4V V BD501 VBE(on) Base-Emitter On Voltage V VCB= 55V;IE= 0 ICBO Collector Cutoff Current VCB= 85V;IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 1.0 mA BD501 hFE DC Current Gain BD501B IC= 5A; VCE= 4V 15 IC= 3.5A; VCE= 4V 90 fT Current-Gain--Bandwidth Product IC= 1.0A ; VCE= 10V 8 MHz isc Websitewww.iscsemi.cn 2 |
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